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BD138G
BD138G
GP BJT BD138G
onsemi
BD138G
--
Diodes, Transistors and Thyristors
GP BJT
BD138G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width3(Max)
Package Height11.1(Max)
Package Length7.8(Max)
Product CategoryBipolar Power
Supplier PackageTO-225
Minimum DC Current Gain25@5mA@2V|25@500mA@2V|40@150mA@2V
Maximum Base Current (A)0.5
Number of Elements per Chip1
Maximum Power Dissipation (mW)1250
Maximum DC Collector Current (A)1.5
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)60
Maximum Collector Cut-Off Current (nA)100
Maximum Collector-Emitter Saturation Voltage (V)0.5@0.05A@0.5A
Description
Trans GP BJT PNP 60V 1.5A 1250mW 3-Pin(3+Tab) TO-225 Box
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