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BD13916S
BD13916S
GP BJT BD13916S
onsemi
BD13916S
--
Diodes, Transistors and Thyristors
GP BJT
BD13916S.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3.45(Max)
Package Height11.2(Max)
Package Length8.3(Max)
Product CategoryBipolar Power
Supplier PackageTO-126
Standard Package NameTO-225-AA
Minimum DC Current Gain25@5mA@2V|25@0.5A@2V|100@150mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1250
Maximum DC Collector Current (A)1.5
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)80
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)80
Maximum Collector Cut-Off Current (nA)100
Maximum Collector-Emitter Saturation Voltage (V)0.5@50mA@500mA
Description
Trans GP BJT NPN 80V 1.5A 1250mW 3-Pin(3+Tab) TO-126 Bag
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