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BD233STU
BD233STU
GP BJT BD233STU
onsemi
BD233STU
--
Diodes, Transistors and Thyristors
GP BJT
BD233STU.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3.45(Max)
Package Height11.2(Max)
Package Length8.3(Max)
Product CategoryBipolar Power
Supplier PackageTO-126
Minimum DC Current Gain25@1A@2V|40@150mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)25000
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)45
Maximum Transition Frequency (MHz)3(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)45
Maximum Collector-Emitter Saturation Voltage (V)0.6@0.1A@1A
Description
Trans GP BJT NPN 45V 2A 25000mW 3-Pin(3+Tab) TO-126 Rail
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