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BD439G
BD439G
GP BJT BD439G
onsemi
BD439G
--
Diodes, Transistors and Thyristors
GP BJT
BD439G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width3(Max)
Package Height11.1(Max)
Package Length7.8(Max)
Product CategoryBipolar Power
Supplier PackageTO-225
Minimum DC Current Gain20@10mA@5V|40@0.5A@1V|25@2A@1V|30@3A@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)36000
Maximum DC Collector Current (A)4
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)3(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)60
Maximum Collector-Emitter Saturation Voltage (V)0.8@0.2A@2A
Description
Trans GP BJT NPN 60V 4A 36000mW 3-Pin(3+Tab) TO-225 Box
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