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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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BDP950H6327XT
BDP950H6327XT
GP BJT BDP950H6327XT
Infineon
BDP950H6327XT
--
Diodes, Transistors and Thyristors
GP BJT
BDP950H6327XT.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
TypePNP
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveYes
PCB changed3
Part StatusLTB
ConfigurationSingle Dual Collector
Package Width3.5
Package Height1.6
Package Length6.5
Product CategoryBipolar Power
Supplier PackageSOT-223
Minimum DC Current Gain25@10mA@5V|85@500mA@1V|50@1A@2V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)5000
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)150
Maximum Collector-Emitter Voltage (V)60
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1.3@0.2A@2A
Maximum Collector-Emitter Saturation Voltage (V)0.5@0.2A@2A
Description
Trans GP BJT PNP 60V 3A 5000mW Automotive 4-Pin(3+Tab) SOT-223 T/R
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