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BDP953E6327
BDP953E6327
GP BJT BDP953E6327
Infineon
BDP953E6327
--
Diodes, Transistors and Thyristors
GP BJT
BDP953E6327.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Collector
Package Width3.5
Package Height1.6
Package Length6.5
Product CategoryBipolar Power
Supplier PackageSOT-223
Standard Package NameSOT-223
Minimum DC Current Gain25@10mA@5V|100@500mA@1V|15@2A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)5000
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)120
Maximum Transition Frequency (MHz)100(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)100
Maximum Base Emitter Saturation Voltage (V)1.5@0.2mA@2A
Maximum Collector-Emitter Saturation Voltage (V)0.8@0.2mA@2A
Description
Trans GP BJT NPN 100V 3A Automotive 4-Pin(3+Tab) SOT-223 T/R
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