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BSR33-QX
BSR33-QX
GP BJT BSR33-QX
Nexperia
BSR33-QX
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Diodes, Transistors and Thyristors
GP BJT
BSR33-QX.pdf
Specification
Product AttributeAttribute Value
TabTab
TypePNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count4
PCB changed3
ConfigurationSingle Dual Collector
Package Width2.6(Max)
Package Height1.6(Max)
Package Length4.6(Max)
Product CategoryBipolar Power
Supplier PackageSOT-89
Minimum DC Current Gain30@100uA@5V|100@100mA@5V|50@500mA@5V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)1350
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)90
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)150
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)1@15mA@150mA|1.2@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.25@15mA@150mA|0.5@50mA@500mA
Description
Trans GP BJT PNP 80V 1A 1350mW 4-Pin(3+Tab) SOT-89
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