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BU508A
BU508A
GP BJT BU508A
STMicroelectronics
BU508A
--
Diodes, Transistors and Thyristors
GP BJT
BU508A.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.9(Max)
Package Height12.2(Max)
Package Length15.2(Max)
Product CategoryBipolar Power
Supplier PackageTO-218
Standard Package NameTO-218
Number of Elements per Chip1
Maximum Power Dissipation (mW)125000
Maximum DC Collector Current (A)8
Maximum Emitter Base Voltage (V)10
Maximum Transition Frequency (MHz)7(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)700
Maximum Base Emitter Saturation Voltage (V)1.3@2A@4.5A
Maximum Collector-Emitter Saturation Voltage (V)1@2A@4.5A
Description
Trans GP BJT NPN 700V 8A 125000mW 3-Pin(3+Tab) TO-218
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