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BU508AW
BU508AW
GP BJT BU508AW
STMicroelectronics
BU508AW
--
Diodes, Transistors and Thyristors
GP BJT
BU508AW.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width5.15(Max)
Package Height20.15(Max)
Package Length15.75(Max)
Product CategoryBipolar Power
Supplier PackageTO-247
Standard Package NameTO-247
SVHC Exceeds ThresholdYes
Minimum DC Current Gain10@0.1A@5V|5@4.5A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)125000
Maximum DC Collector Current (A)8
Maximum Emitter Base Voltage (V)9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)700
Maximum Base Emitter Saturation Voltage (V)1.1@2A@4.5A
Maximum Collector-Emitter Saturation Voltage (V)1@1.6A@4.5A
Description
Trans GP BJT NPN 700V 8A 125000mW 3-Pin(3+Tab) TO-247 Tube
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