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BUF420D1
BUF420D1
GP BJT BUF420D1
STMicroelectronics
BUF420D1
--
Diodes, Transistors and Thyristors
GP BJT
BUF420D1.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSSupplier Unconfirmed
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.9(Max)
Package Height12.2(Max)
Package Length15.2(Max)
Product CategoryBipolar Power
Supplier PackageTO-218
Standard Package NameTO-218
Number of Elements per Chip1
Maximum Power Dissipation (mW)200000
Maximum DC Collector Current (A)30
Maximum Emitter Base Voltage (V)7
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)450
Maximum Base Emitter Saturation Voltage (V)1.1(Typ)@2A@20A|0.9(Typ)@1A@10A
Maximum Collector-Emitter Saturation Voltage (V)0.5(Typ)@2A@20A|0.8(Typ)@1A@10A
Description
Trans GP BJT NPN 450V 30A 200000mW 3-Pin(3+Tab) TO-218
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