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BULK381D
BULK381D
GP BJT BULK381D
STMicroelectronics
BULK381D
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSSupplier Unconfirmed
ECCN (US)EAR99
AutomotiveNo
Part StatusObsolete
ConfigurationSingle
Product CategoryBipolar Power
Minimum DC Current Gain7@2A@5V|10@10mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)60000
Maximum DC Collector Current (A)5
Maximum Emitter Base Voltage (V)9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)400
Maximum Base Emitter Saturation Voltage (V)1.3@0.5A@2A
Maximum Collector-Emitter Saturation Voltage (V)1@0.5A@2A
Description
Trans GP BJT NPN 400V 5A 3-Pin SOT-82
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