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BUT100
BUT100
GP BJT BUT100
STMicroelectronics
BUT100
--
Diodes, Transistors and Thyristors
GP BJT
BUT100.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed2
Part StatusObsolete
ConfigurationSingle
Package Width26.2(Max)
Package Height8.7(Max)
Package Length39.5(Max)
Product CategoryBipolar Power
Supplier PackageTO-3
Standard Package NameTO-204-AA
SVHC Exceeds ThresholdYes
Number of Elements per Chip1
Maximum Power Dissipation (mW)300000
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)200
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)125
Maximum Base Emitter Saturation Voltage (V)1.4@2.5A@50A|2@10A@100A
Maximum Collector-Emitter Saturation Voltage (V)0.9@2.5A@50A|0.9@10A@100A
Description
Trans GP BJT NPN 125V 300000mW 3-Pin(2+Tab) TO-3 Tube
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