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GP BJT BUT11APX-1200,127
NXP
BUT11APX-1200,127
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| Type | NPN |
| EU RoHS | Supplier Unconfirmed |
| Material | Si |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Rail |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Obsolete |
| Configuration | Single |
| Package Width | 4.6(Max) |
| Package Height | 15.8(Max) |
| Package Length | 10.3(Max) |
| Product Category | Bipolar Power |
| Supplier Package | TO-220F |
| Minimum DC Current Gain | 13@1A@5V|20@500mA@5V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 32000 |
| Maximum DC Collector Current (A) | 6 |
| Maximum Collector Base Voltage (V) | 1200 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 550 |
| Maximum Collector-Emitter Saturation Voltage (V) | 1@0.4A@2A |
| Description |
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