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BUV21G
BUV21G
GP BJT BUV21G
onsemi
BUV21G
--
Diodes, Transistors and Thyristors
GP BJT
BUV21G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width26.67(Max)
Package Height8.51(Max)
Package Length38.86
Product CategoryBipolar Power
Supplier PackageTO-204
Standard Package NameTO-3
SVHC Exceeds ThresholdYes
Minimum DC Current Gain20@12A@2V|10@5A@4V
Number of Elements per Chip1
Maximum Power Dissipation (mW)250000
Maximum DC Collector Current (A)40
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)250
Maximum Transition Frequency (MHz)8(Min)
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)200
Maximum Base Emitter Saturation Voltage (V)1.5@3A@25A
Maximum Collector-Emitter Saturation Voltage (V)0.6@1.2A@12A|1.5@3A@25A
Description
Trans GP BJT NPN 200V 40A 250000mW 3-Pin(2+Tab) TO-204 Tray
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