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GP BJT CPH5520-TL-E
onsemi
CPH5520-TL-E
--
Diodes, Transistors and Thyristors
GP BJT
CPH5520-TL-E.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeNPN|PNP
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
PCB changed5
Part StatusActive
ConfigurationDual Common Emitter
Package Width1.6
Package Height0.9
Package Length2.9
Product CategoryBipolar Power
Supplier PackageCPH
SVHC Exceeds ThresholdYes
Minimum DC Current Gain200@100mA@2V
Number of Elements per Chip2
Maximum Power Dissipation (mW)1200
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)80@NPN|50@PNP
Maximum Transition Frequency (MHz)420(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)50
Maximum Base Emitter Saturation Voltage (V)1.2@50mA@1A
Maximum Collector-Emitter Saturation Voltage (V)0.26@50mA@1A@NPN|0.33@50mA@1A@PNP
Description
Trans GP BJT NPN/PNP 50V 2A 1200mW 5-Pin CPH T/R
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