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CPH6532-TL-E
CPH6532-TL-E
GP BJT CPH6532-TL-E
onsemi
CPH6532-TL-E
--
Diodes, Transistors and Thyristors
GP BJT
CPH6532-TL-E.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusObsolete
ConfigurationDual
Package Width1.6
Package Height0.9
Package Length2.9
Product CategoryBipolar Power
Supplier PackageCPH
Minimum DC Current Gain200@100mA@2V
Number of Elements per Chip2
Maximum Power Dissipation (mW)1100
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)80
Maximum Transition Frequency (MHz)420(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)1.2@10mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.19@10mA@500mA|0.135@6mA@300mA
Description
Trans GP BJT NPN 80V 1A 1100mW 6-Pin CPH T/R
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