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GP BJT DNLS412E-13
Diodes Incorporated
DNLS412E-13
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| Type | NPN |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 3 |
| Part Status | Obsolete |
| Configuration | Single Dual Collector |
| Package Width | 3.5 |
| Package Height | 1.6 |
| Package Length | 6.5 |
| Product Category | Bipolar Power |
| Supplier Package | SOT-223 |
| Standard Package Name | SOT-223 |
| Minimum DC Current Gain | 400@3A@2V|100@10A@2V|500@0.1A@2V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1000 |
| Maximum DC Collector Current (A) | 4 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 12 |
| Maximum Transition Frequency (MHz) | 150(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 12 |
| Maximum Base Emitter Saturation Voltage (V) | 1.1@20mA@3A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.35@20mA@3A|0.4@50mA@4A|0.04@1mA@0.1A|0.06@0.5mA@0.1A|0.18@50mA@1A |
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