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GP BJT DXT2012P5-13
Diodes Incorporated
DXT2012P5-13
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.75 |
| Tab | Tab |
| PPAP | No |
| Type | PNP |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Flat |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 5.37 |
| Package Height | 1.1(Max) |
| Package Length | 3.97 |
| Product Category | Bipolar Power |
| Supplier Package | PowerDI 5 |
| Standard Package Name | PowerDI 5 |
| Minimum DC Current Gain | 100@10mA@1V|100@2A@1V|45@5A@1V|10@10A@1V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3200 |
| Maximum DC Collector Current (A) | 5.5 |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Collector Base Voltage (V) | 100 |
| Maximum Transition Frequency (MHz) | 120(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Collector-Emitter Voltage (V) | 60 |
| Maximum Collector Cut-Off Current (nA) | 20 |
| Maximum Base Emitter Saturation Voltage (V) | 1.15@500mA@5A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.25@500mA@5A|0.025@10mA@0.1A|0.07@100mA@1A|0.12@200mA@2A |
| Description |
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