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GP BJT DXT458P5-13
Diodes Incorporated
DXT458P5-13
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| Type | NPN |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 5.37 |
| Package Height | 1.1(Max) |
| Package Length | 3.97 |
| Product Category | Bipolar Power |
| Supplier Package | PowerDI 5 |
| Minimum DC Current Gain | 100@1mA@10V|100@50mA@10V|15@100mA@10V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2800 |
| Maximum DC Collector Current (A) | 0.3 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 400 |
| Maximum Transition Frequency (MHz) | 50(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 400 |
| Maximum Base Emitter Saturation Voltage (V) | 0.9@5mA@50mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.2@2mA@20mA|0.5@6mA@50mA |
| Description |
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