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GP BJT DXT651Q-13
Diodes Incorporated
DXT651Q-13
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Yes |
| Type | NPN |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | Yes |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single Dual Collector |
| Package Width | 2.5 |
| Package Height | 1.5 |
| Package Length | 4.5 |
| Product Category | Bipolar Power |
| Supplier Package | SOT-89 |
| Minimum DC Current Gain | 70@50mA@2V|100@500mA@2V|80@1A@2V|40@2A@2V |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2000 |
| Maximum DC Collector Current (A) | 3 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 80 |
| Maximum Transition Frequency (MHz) | 200(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 60 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Base Emitter Saturation Voltage (V) | 1.25@100mA@1A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@100mA@1A|0.6@300mA@3A |
| Description |
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