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DXTN07100BP5-13
DXTN07100BP5-13
GP BJT DXTN07100BP5-13
Diodes Incorporated
DXTN07100BP5-13
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width5.37
Package Height1.1(Max)
Package Length3.97
Product CategoryBipolar Power
Supplier PackagePowerDI 5
Minimum DC Current Gain70@50mA@2V|100@500mA@2V|55@1A@2V|25@2A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)3200
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)120
Maximum Transition Frequency (MHz)175(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)100
Maximum Base Emitter Saturation Voltage (V)1.25@100mA@1A
Maximum Collector-Emitter Saturation Voltage (V)0.3@100mA@1A|0.5@200mA@2A
Description
Trans GP BJT NPN 100V 2A 3200mW 3-Pin(3+Tab) PowerDI 5 T/R
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