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GP BJT DXTN3C60PS-13
Diodes Incorporated
DXTN3C60PS-13
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| SVHC | Yes |
| Type | NPN |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Lead Shape | No Lead |
| PCB changed | 8 |
| Part Status | Active |
| Configuration | Single Quad Collector Triple Emitter |
| Package Width | 5.8 |
| Package Height | 1.05(Max) |
| Package Length | 4.9 |
| Product Category | Bipolar Power |
| Supplier Package | PowerDI EP |
| SVHC Exceeds Threshold | Yes |
| Minimum DC Current Gain | 200@500mA@2V|200@1A@2V|100@2A@2V|50@3A@2V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2500 |
| Maximum DC Collector Current (A) | 3 |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Collector Base Voltage (V) | 60 |
| Maximum Transition Frequency (MHz) | 140(Typ) |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 60 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Base Emitter Saturation Voltage (V) | 1@100mA@1A|1.2@200mA@2A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.12@50mA@1A|0.27@300mA@3A |
| Description |
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