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DZT5401-13
DZT5401-13
GP BJT DZT5401-13
Diodes Incorporated
DZT5401-13
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Diodes, Transistors and Thyristors
GP BJT
DZT5401-13.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
TabTab
PPAPNo
TypePNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle Dual Collector
Package Width3.5
Package Height1.6
Package Length6.5
Product CategoryBipolar Power
Supplier PackageSOT-223
Standard Package NameSOT-223
Minimum DC Current Gain50@1mA@5V|60@10mA@5V|50@50mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)160
Maximum Transition Frequency (MHz)300
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)150
Maximum Base Emitter Saturation Voltage (V)1@1mA@10mA|1@5mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)0.2@1mA@10mA|0.5@5mA@50mA
Description
Trans GP BJT PNP 150V 0.6A 1000mW 4-Pin(3+Tab) SOT-223 T/R
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