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EMT1DXV6T1G
EMT1DXV6T1G
GP BJT EMT1DXV6T1G
onsemi
EMT1DXV6T1G
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Diodes, Transistors and Thyristors
GP BJT
EMT1DXV6T1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypePNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeFlat
PCB changed6
Part StatusActive
ConfigurationDual
Package Width1.2
Package Height0.55
Package Length1.6
Product CategoryBipolar Small Signal
Supplier PackageSOT-563
Standard Package NameSOT
Minimum DC Current Gain120@1mA@6V
Number of Elements per Chip2
Maximum Power Dissipation (mW)500
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)50
Maximum Transition Frequency (MHz)140(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)60
Maximum Collector Cut-Off Current (nA)0.5
Maximum Collector-Emitter Saturation Voltage (V)0.5@5mA@50mA
Description
Trans GP BJT PNP 60V 0.1A 500mW 6-Pin SOT-563 T/R
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