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FJC1963QTF
FJC1963QTF
GP BJT FJC1963QTF
onsemi
FJC1963QTF
--
Diodes, Transistors and Thyristors
GP BJT
FJC1963QTF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeFlat
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Collector
Package Width2.7(Max)
Package Height1.7(Max)
Package Length4.7(Max)
Product CategoryBipolar Small Signal
Supplier PackageSOT-89
Standard Package NameSOT-89
Minimum DC Current Gain120@0.5A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)50
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)30
Maximum Base Emitter Saturation Voltage (V)1.2@0.15A@1.5A
Maximum Collector-Emitter Saturation Voltage (V)0.45@0.15A@1.5A
Description
Trans GP BJT NPN 30V 3A 500mW 4-Pin(3+Tab) SOT-89 T/R
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