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FJD3076TM
FJD3076TM
GP BJT FJD3076TM
onsemi
FJD3076TM
--
Diodes, Transistors and Thyristors
GP BJT
FJD3076TM.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
ConfigurationSingle
Package Width6.1
Package Height2.3
Package Length6.6
Product CategoryBipolar Power
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Minimum DC Current Gain130@0.5A@3V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)40
Maximum Transition Frequency (MHz)100(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)32
Maximum Collector-Emitter Saturation Voltage (V)0.8@0.2A@2A
Description
Trans GP BJT NPN 32V 2A 1000mW 3-Pin(2+Tab) DPAK T/R
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