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FJN13003TA
FJN13003TA
GP BJT FJN13003TA
onsemi
FJN13003TA
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Diodes, Transistors and Thyristors
GP BJT
FJN13003TA.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingAmmo
Pin Count3
AutomotiveNo
Lead ShapeFormed
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Product CategoryBipolar Power
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain5@1A@2V|9@500mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1100
Maximum DC Collector Current (A)1.5
Maximum Emitter Base Voltage (V)9
Maximum Collector Base Voltage (V)700
Maximum Transition Frequency (MHz)4(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)400
Maximum Base Emitter Saturation Voltage (V)1@0.1A@0.5A|1.2@0.25A@1A
Maximum Collector-Emitter Saturation Voltage (V)1@0.25A@1A|3@0.5A@1.5A|0.5@0.1A@0.5A
Description
Trans GP BJT NPN 400V 1.5A 3-Pin TO-92 Ammo
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