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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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GP BJT FZT651TA-83
Diodes Incorporated
FZT651TA-83
--
Diodes, Transistors and Thyristors
GP BJT
FZT651TA-83.pdf
Specification
Product AttributeAttribute Value
HTS8541497080
TabTab
PPAPNo
TypeNPN
MaterialSi
MountingSurface Mount
PackagingTape and Reel
Pin Count4
AutomotiveNo
PCB changed3
Part StatusActive
ConfigurationSingle Dual Collector
Package Width3.5
Package Height1.6
Package Length6.5
Product CategoryBipolar Power
Supplier PackageSOT-223
Minimum DC Current Gain70@50mA@2V|100@500mA@2V|80@1A@2V|40@2A@2V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)3000
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)80
Maximum Transition Frequency (MHz)175(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)60
Maximum Base Emitter Saturation Voltage (V)1.25@100mA@1A
Maximum Collector-Emitter Saturation Voltage (V)0.3@100mA@1A|0.6@300mA@3A
Description
SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTORS
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