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FZT755TA
FZT755TA
GP BJT FZT755TA
Diodes Incorporated
FZT755TA
--
Diodes, Transistors and Thyristors
GP BJT
FZT755TA.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle Dual Collector
Package Width3.5
Package Height1.6
Package Length6.5
Product CategoryBipolar Power
Supplier PackageSOT-223
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Minimum DC Current Gain50@10mA@5V|50@500mA@5V|20@1A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)3000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)150
Maximum Transition Frequency (MHz)30(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)150
Maximum Base Emitter Saturation Voltage (V)1.1@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.5@50mA@500mA|0.5@200mA@1A
Description
Trans GP BJT PNP 150V 1A 3000mW 4-Pin(3+Tab) SOT-223 T/R
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