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GRP-DATA-JANSR2N3637UB
GRP-DATA-JANSR2N3637UB
GP BJT GRP-DATA-JANSR2N3637UB
Microchip Technology
GRP-DATA-JANSR2N3637UB
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Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingWaffle
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
ConfigurationSingle
Package Width2.74(Max)
Package Height1.42(Max)
Package Length3.25(Max)
Product CategoryBipolar Power
Supplier PackageCase UB
Minimum DC Current Gain55@0.1mA@10V|90@1mA@10V|100@10mA@10V|100@50mA@10V|60@150mA@10V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)175
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)175
Maximum Collector Cut-Off Current (nA)10000
Maximum Base Emitter Saturation Voltage (V)0.8@1mA@10mA|0.9@5mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@1mA@10mA|0.6@5mA@50mA
Description
Trans GP BJT PNP 175V 1A 1000mW 4-Pin Case UB Waffle
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