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GP BJT HBDM60V600W-7
Diodes Incorporated
HBDM60V600W-7
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | NPN|PNP |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | Obsolete |
| Configuration | Dual |
| Package Width | 1.3 |
| Package Height | 0.95 |
| Package Length | 2.15 |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-363 |
| Standard Package Name | SOT-26 |
| Minimum DC Current Gain | 250@10mA@1V|100@100mA@1V@NPN|100@100uA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V@PNP |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 200 |
| Maximum DC Collector Current (A) | 0.5@NPN|0.6@PNP |
| Maximum Emitter Base Voltage (V) | 6@NPN|5.5@PNP |
| Maximum Collector Base Voltage (V) | 80@NPN|60@PNP |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 60@PNP|65@NPN |
| Maximum Base Emitter Saturation Voltage (V) | 0.95@5mA@100mA@NPN|0.95@15mA@150mA|1.3@50mA@500mA@PNP |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4@10mA@100mA@NPN|0.3@15mA@150mA|0.5@50mA@500mA@PNP |
| Description |
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