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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JAN2N1486
JAN2N1486
GP BJT JAN2N1486
Microchip Technology
JAN2N1486
--
Diodes, Transistors and Thyristors
GP BJT
JAN2N1486.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
Diameter16.51(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height8.38(Max)
Product CategoryBipolar Power
Supplier PackageTO-8
Standard Package NameTO-233-AA
Minimum DC Current Gain35@750mA@4V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)1750
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)12
Maximum Collector Base Voltage (V)100
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 200
Maximum Collector-Emitter Voltage (V)55
Maximum Collector-Emitter Saturation Voltage (V)0.75@40mA@750mA
Description
Trans GP BJT NPN 55V 3A 1750mW 3-Pin TO-8 Tray
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