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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JAN2N2060
JAN2N2060
GP BJT JAN2N2060
Microchip Technology
JAN2N2060
--
Diodes, Transistors and Thyristors
GP BJT
JAN2N2060.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.75
PPAPNo
TypeNPN
EU RoHSNot Compliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
ConfigurationDual
Package Height4.7(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-78
Standard Package NameTO
Minimum DC Current Gain25@10uA@5V|30@100uA@5V|40@1mA@5V|50@10mA@5V
Supplier Temperature GradeMilitary
Number of Elements per Chip2
Maximum Power Dissipation (mW)600
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)100
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)60
Maximum Base Emitter Saturation Voltage (V)0.9@5mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@5mA@50mA
Description
Trans GP BJT NPN 60V 0.5A 600mW 6-Pin TO-78 Bag
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