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JAN2N2432
JAN2N2432
GP BJT JAN2N2432
Microchip Technology
JAN2N2432
--
Diodes, Transistors and Thyristors
GP BJT
JAN2N2432.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
Diameter5.84(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height5.33(Max)
Product CategoryBipolar Power
Supplier PackageTO-18
Standard Package NameTO-206-AA
Minimum DC Current Gain30@10uA@5V|80@1mA@5V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)300
Maximum DC Collector Current (A)0.1
Maximum Collector Base Voltage (V)30
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)30
Maximum Collector-Emitter Saturation Voltage (V)0.15@0.5mA@10mA
Description
Trans GP BJT NPN 30V 0.1A 300mW 3-Pin TO-18 Bag
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