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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JAN2N3421
JAN2N3421
GP BJT JAN2N3421
Microchip Technology
JAN2N3421
--
Diodes, Transistors and Thyristors
GP BJT
JAN2N3421.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height6.6(Max)
Product CategoryBipolar Power
Supplier PackageTO-5
Standard Package NameTO
Minimum DC Current Gain40@100mA@2V|40@1A@2V|30@2A@2V|15@5A@5V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)8
Maximum Collector Base Voltage (V)125
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)1.2@0.1A@1A|1.4@0.2A@2A
Maximum Collector-Emitter Saturation Voltage (V)0.25@0.1A@1A|0.5@0.2A@2A
Description
Trans GP BJT NPN 80V 3A 1000mW 3-Pin TO-5 Bag
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