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GP BJT JAN2N3637UB
Microchip Technology
JAN2N3637UB
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| Type | PNP |
| EU RoHS | Not Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Waffle |
| Pin Count | 4 |
| Automotive | No |
| PCB changed | 4 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 2.74(Max) |
| Package Height | 1.42(Max) |
| Package Length | 3.25(Max) |
| Product Category | Bipolar Power |
| Supplier Package | Case UB |
| Minimum DC Current Gain | 55@0.1mA@10V|90@1mA@10V|100@10mA@10V|100@50mA@10V|60@150mA@10V |
| Supplier Temperature Grade | Military |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1000 |
| Maximum DC Collector Current (A) | 1 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 175 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Operating Junction Temperature (°C) | -65 to 200 |
| Maximum Collector-Emitter Voltage (V) | 175 |
| Maximum Base Emitter Saturation Voltage (V) | 0.8@1mA@10mA|0.9@5mA@50mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@1mA@10mA|0.6@5mA@50mA |
| Description |
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