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GP BJT JAN2N3749
Microchip Technology
JAN2N3749
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| Type | NPN |
| EU RoHS | Not Compliant |
| Material | Si |
| Mounting | Stud |
| ECCN (US) | EAR99 |
| Packaging | Tray |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Terminal Stud |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 11.1(Max) |
| Package Height | 23.44(Max) |
| Package Length | 12.81(Max) |
| Product Category | Bipolar Power |
| Supplier Package | TO-59 |
| Minimum DC Current Gain | 40@50mA@5V|40@1A@2V|15@5A@5V |
| Supplier Temperature Grade | Military |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2000 |
| Maximum DC Collector Current (A) | 5 |
| Maximum Emitter Base Voltage (V) | 8 |
| Maximum Collector Base Voltage (V) | 110 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 80 |
| Maximum Base Emitter Saturation Voltage (V) | 1.2@0.1A@1A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.25@0.1A@1A|1.5@0.5A@5A |
| Description |
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