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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JAN2N3996
JAN2N3996
GP BJT JAN2N3996
Microchip Technology
JAN2N3996
--
Diodes, Transistors and Thyristors
GP BJT
JAN2N3996.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingStud
ECCN (US)EAR99
Pin Count4
AutomotiveNo
Lead ShapeTerminal Stud
PCB changed4
Part StatusActive
ConfigurationSingle
Package Width11.12(Max)
Package Length12.83(Max)
Product CategoryBipolar Power
Supplier PackageTO-111
Minimum DC Current Gain15@5A@5V|40@1A@2V|30@50mA@2V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Maximum DC Collector Current (A)5
Maximum Emitter Base Voltage (V)8
Maximum Collector Base Voltage (V)100
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)1.6@0.5A@5A|1.2@0.1A@1A
Maximum Collector-Emitter Saturation Voltage (V)0.25@0.1A@1A|2@0.5A@5A
Description
Trans GP BJT NPN 80V 5A 4-Pin TO-111
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