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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JAN2N4854
JAN2N4854
GP BJT JAN2N4854
Microchip Technology
JAN2N4854
--
Diodes, Transistors and Thyristors
GP BJT
JAN2N4854.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypePNP|NPN
EU RoHSNot Compliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
ConfigurationDual
Package Height4.7(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-78
Standard Package NameTO
Minimum DC Current Gain50@150mA@1V|35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|35@300mA@10V
Supplier Temperature GradeMilitary
Number of Elements per Chip2
Maximum Power Dissipation (mW)600
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)40
Maximum Base Emitter Saturation Voltage (V)1.25@15mA@150mA
Maximum Collector-Emitter Saturation Voltage (V)0.4@15mA@150mA
Description
Trans GP BJT NPN/PNP 40V 0.6A 600mW 6-Pin TO-78
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