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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JAN2N5153U3
JAN2N5153U3
GP BJT JAN2N5153U3
Microchip Technology
JAN2N5153U3
--
Diodes, Transistors and Thyristors
GP BJT
JAN2N5153U3.pdf
Specification
Product AttributeAttribute Value
HTS8541.10.00.80
PPAPNo
TypePNP
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeNo Lead
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width10.16
Package Length7.52
Product CategoryBipolar Power
Supplier PackageSMD-0.5
Standard Package NameSMD
Minimum DC Current Gain50@50mA@5V|70@2.5A@5V|40@5A@5V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)5.5
Maximum Collector Base Voltage (V)100
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)1.45@250mA@2.5A|2.2@500mA@5A
Maximum Collector-Emitter Saturation Voltage (V)0.75@250mA@2.5A|1.5@500mA@5A
Description
Trans GP BJT PNP 80V 2A 1000mW 3-Pin SMD-0.5 Tray
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