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GP BJT JAN2N5339U3
Microchip Technology
JAN2N5339U3
--
Diodes, Transistors and Thyristors
GP BJT
JAN2N5339U3.pdf
Specification
Product AttributeAttribute Value
HTS8541.10.00.80
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeNo Lead
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width7.65(Max)
Package Height3.06(Max)
Package Length10.29(Max)
Product CategoryBipolar Power
Supplier PackageTO-276AA
Minimum DC Current Gain40@5A@2V|60@2A@2V|60@0.5A@2V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)5
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)100
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 200
Maximum Collector-Emitter Voltage (V)100
Maximum Collector Cut-Off Current (nA)1000
Maximum Base Emitter Saturation Voltage (V)1.2@0.2A@2A|1.8@0.5A@5A
Maximum Collector-Emitter Saturation Voltage (V)0.7@0.2A@2A|1.2@0.5A@5A
Description
Trans GP BJT NPN 100V 5A 1000mW 3-Pin TO-276AA Tray
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