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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JAN2N6212
JAN2N6212
GP BJT JAN2N6212
Microchip Technology
JAN2N6212
--
Diodes, Transistors and Thyristors
GP BJT
JAN2N6212.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
TypePNP
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width17.78
Package Height8.64(Max)
Package Length24.43(Max) + 7.36
Product CategoryBipolar Power
Supplier PackageTO-66
Standard Package NameTO
Minimum DC Current Gain30@1A@5V|10@1A@3.2V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)3000
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)350
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)300
Maximum Base Emitter Saturation Voltage (V)1.4@0.125A@1A
Maximum Collector-Emitter Saturation Voltage (V)1.6@0.125A@1A
Description
Trans GP BJT PNP 300V 2A 3000mW 3-Pin(2+Tab) TO-66 Tray
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