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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JAN2N6251
JAN2N6251
GP BJT JAN2N6251
Microchip Technology
JAN2N6251
--
Diodes, Transistors and Thyristors
GP BJT
JAN2N6251.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width26.42
Package Height7.92
Package Length39.29
Product CategoryBipolar Power
Supplier PackageTO-3
Standard Package NameTO-204-AA
Minimum DC Current Gain6@10A@3V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)6000
Maximum DC Collector Current (A)10
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)450
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)350
Maximum Base Emitter Saturation Voltage (V)2.25@1.67A@10A
Maximum Collector-Emitter Saturation Voltage (V)1.5@1.67A@10A
Description
Trans GP BJT NPN 350V 10A 6000mW 3-Pin(2+Tab) TO-3 Tray
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