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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JAN2N6341
JAN2N6341
GP BJT JAN2N6341
Microchip Technology
JAN2N6341
--
Diodes, Transistors and Thyristors
GP BJT
JAN2N6341.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width26.42
Package Height7.92
Package Length39.29
Product CategoryBipolar Power
Supplier PackageTO-3
Standard Package NameTO-204-AA
Minimum DC Current Gain40@0.5A@2V|30@10A@2V|12@25A@2V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)200000
Maximum DC Collector Current (A)25
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)180
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)150
Maximum Base Emitter Saturation Voltage (V)1.8@1A@10A
Maximum Collector-Emitter Saturation Voltage (V)1@1A@10A|1.8@2.5A@25A
Description
Trans GP BJT NPN 150V 25A 3-Pin(2+Tab) TO-3
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