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JAN2N6987
JAN2N6987
GP BJT JAN2N6987
Microchip Technology
JAN2N6987
--
Diodes, Transistors and Thyristors
GP BJT
JAN2N6987.pdf
Specification
Product AttributeAttribute Value
HTS8541.10.00.80
PPAPNo
TypePNP
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count14
AutomotiveNo
PCB changed14
Part StatusActive
ConfigurationQuad
Product CategoryBipolar Power
Supplier PackageTO-116
Standard Package NameTO
Minimum DC Current Gain75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V
Number of Elements per Chip4
Maximum Power Dissipation (mW)1500
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)60
Maximum Base Emitter Saturation Voltage (V)1.3@15mA@150mA|2.6@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.4@15mA@150mA|1.6@50mA@500mA
Description
Trans GP BJT PNP 60V 0.6A 1500mW 14-Pin TO-116 Tube
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