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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JAN2N6990
JAN2N6990
GP BJT JAN2N6990
Microchip Technology
JAN2N6990
--
Diodes, Transistors and Thyristors
GP BJT
JAN2N6990.pdf
Specification
Product AttributeAttribute Value
HTS8541.10.00.80
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTray
Pin Count14
AutomotiveNo
Lead ShapeFlat
PCB changed14
Part StatusActive
ConfigurationQuad
Package Width6.6(Max)
Package Height2.4(Max)
Package Length7.11(Max)
Product CategoryBipolar Power
Supplier PackageFPAK
Standard Package NameFPAK
Minimum DC Current Gain50@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V
Supplier Temperature GradeMilitary
Number of Elements per Chip4
Maximum Power Dissipation (mW)400
Maximum DC Collector Current (A)0.8
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)75
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)50
Maximum Base Emitter Saturation Voltage (V)1.2@15mA@150mA|2@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@15mA@150mA|1@50mA@500mA
Description
Trans GP BJT NPN 50V 0.8A 400mW 14-Pin FPAK Tray
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