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GP BJT JANKCB2N3440
Microchip Technology
JANKCB2N3440
--
Diodes, Transistors and Thyristors
GP BJT
JANKCB2N3440.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSNot Compliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height6.6(Max)
Product CategoryBipolar Power
Supplier PackageTO-39
Minimum DC Current Gain40@20mA@10V|30@2mA@10V|10@0.2mA@10V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)800
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)300
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)250
Maximum Base Emitter Saturation Voltage (V)1.3@4mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)0.5@4mA@50mA
Description
Trans GP BJT NPN 250V 1A 800mW 3-Pin TO-39
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