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GP BJT JANS2N3810U
Microchip Technology
JANS2N3810U
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| PPAP | No |
| Type | PNP |
| EU RoHS | Not Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tray |
| Pin Count | 6 |
| Automotive | No |
| PCB changed | 6 |
| Part Status | Active |
| Configuration | Dual |
| Package Width | 6.35(Max) |
| Package Height | 2.03(Max) |
| Package Length | 4.45(Max) |
| Product Category | Bipolar Small Signal |
| Supplier Package | Case U |
| Minimum DC Current Gain | 100@10uA@5V|150@100uA@5V|150@1mA@5V|125@10mA@5V |
| Supplier Temperature Grade | Military |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 350 |
| Maximum DC Collector Current (A) | 0.05 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 60 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Operating Junction Temperature (°C) | -65 to 200 |
| Maximum Collector-Emitter Voltage (V) | 60 |
| Maximum Base Emitter Saturation Voltage (V) | 0.7@10uA@100uA|0.8@100uA@1mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.2@10uA@100uA|0.25@100uA@1mA |
| Description |
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