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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANS2N5005
JANS2N5005
GP BJT JANS2N5005
Microchip Technology
JANS2N5005
--
Diodes, Transistors and Thyristors
GP BJT
JANS2N5005.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypePNP
EU RoHSNot Compliant
MaterialSi
MountingStud
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeTerminal Stud
PCB changed3
ConfigurationSingle
Package Width11.1(Max)
Package Height23.44(Max)
Package Length12.81(Max)
Product CategoryBipolar Power
Supplier PackageTO-59
Minimum DC Current Gain40@5A@5V|70@2.5A@5V|50@50mA@5V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Maximum DC Collector Current (A)10
Maximum Emitter Base Voltage (V)5.5
Maximum Collector Base Voltage (V)100
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)1.45@250mA@2.5A|2.2@500mA@5A
Maximum Collector-Emitter Saturation Voltage (V)0.75@250mA@2.5A|1.5@500mA@5A
Description
Trans GP BJT PNP 80V 10A 3-Pin TO-59
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