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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANS2N5666U3
JANS2N5666U3
GP BJT JANS2N5666U3
Microchip Technology
JANS2N5666U3
--
Diodes, Transistors and Thyristors
GP BJT
JANS2N5666U3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeNo Lead
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width10.16
Package Length7.52
Product CategoryBipolar Power
Supplier PackageSMD-0.5
Standard Package NameSMD
Minimum DC Current Gain5@5A@5V|40@0.5A@2V|40@1A@5V|15@3A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1500
Maximum DC Collector Current (A)5
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)250
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)200
Maximum Base Emitter Saturation Voltage (V)1.5@1A@5A|1.2@0.3A@3A
Maximum Collector-Emitter Saturation Voltage (V)1@1A@5A|0.4@0.3A@3A
Description
Trans GP BJT NPN 200V 5A 3-Pin SMD-0.5
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